TY - JOUR T1 - Engineering carrier confinement potentials in 1.3-mu m InAs/GaAs quantum dots with InAlAs layers: Enhancement of the high-temperature photoluminescence intensity JO - APPL PHYS LETT PY - 2003/11/03 AU - Liu HY AU - Sellers IR AU - Hopkinson M AU - Harrison CN AU - Mowbray DJ AU - Skolnick MS ED - DO - DOI: 10.1063/1.1622443 VL - 83 IS - 18 SP - 3716 EP - 3718 Y2 - 2025/05/19 ER -