TY - CONF T1 - A study of the influence of technology on the negative gate capacitance in 1.2kV IGBTs JO - Proceedings of the International Symposium on Power Semiconductor Devices and ICs PY - 2008/01/01 AU - Kong ST AU - Ngwendson L AU - Sweet M AU - Sankara Narayanan EM ED - DO - DOI: 10.1109/ISPSD.2008.4538927 SN - 9781424415328 SP - 177 EP - 180 Y2 - 2025/05/23 ER -