TY - JOUR T1 - Barrier width dependence of leakage currents in InGaAs/ GaAs multiple quantum well P-I-N diodes JO - Journal of Electronic Materials PY - 1991/01/01 AU - David JPR AU - Grey R AU - Pate MA AU - Claxton PA AU - Woodhead J ED - DO - DOI: 10.1007/BF02657893 VL - 20 IS - 4 SP - 295 EP - 297 Y2 - 2025/05/21 ER -