TY - JOUR T1 - Real-Time Measurement of Temperature Sensitive Electrical Parameters in SiC Power MOSFETs JO - IEEE Transactions on Industrial Electronics UR - http://eprints.whiterose.ac.uk/118921/ PY - 2017/08/14 AU - Griffo A AU - Wang J AU - Colombage K AU - Kamel T ED - DO - DOI: 10.1109/TIE.2017.2739687 PB - Institute of Electrical and Electronics Engineers VL - 65 IS - 3 SP - 2663 EP - 2671 Y2 - 2025/06/22 ER -