@article{article, title = {{Effects of high temperature annealing on the device characteristics of Ga0.52In0.48P/GaAs and Al0.52In0.48P/GaAs heterojunction bipolar transistors}}, url = {{}}, year = {{1998}}, month = {{1}}, author = {{Yow HK and Houston PA and Button CC and David JPR and Ng CMS}}, volume = {{27}}, journal = {{J ELECTRON MATER}}, issue = {{1}}, pages = {{17-23}}, note = {{Accessed on 2025/05/18}}}