TY - JOUR T1 - Effects of high temperature annealing on the device characteristics of Ga0.52In0.48P/GaAs and Al0.52In0.48P/GaAs heterojunction bipolar transistors JO - J ELECTRON MATER PY - 1998/01/01 AU - Yow HK AU - Houston PA AU - Button CC AU - David JPR AU - Ng CMS ED - VL - 27 IS - 1 SP - 17 EP - 23 Y2 - 2025/05/18 ER -